Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics

• Main Authors: Yang, J.-J., Wang, X.-P., Zhu, C.-X., Li, M.-F., Yu, H.-Y., Loh, W.-Y., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Chemical vapor deposited (CVD); Fermi-level pinning; Flatband voltage (Vfb); HfLaO; HfO2; Ni-based fully silicided (FUSI) gate; Physical vapor deposited (PVD)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82294
• Institution: National University of Singapore

10.1109/TED.2008.926581