Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

10.1109/LED.2005.859673

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Bibliographic Details
Main Authors:	Ang, D.S., Wang, S., Ling, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Activation energy Arrhenius equation Hole trapping Negative-bias temperature instability (NBTI) Oxynitride Tunneling
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82307
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82307
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spelling	sg-nus-scholar.10635-823072024-11-08T18:01:38Z Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET Ang, D.S. Wang, S. Ling, C.H. ELECTRICAL & COMPUTER ENGINEERING Activation energy Arrhenius equation Hole trapping Negative-bias temperature instability (NBTI) Oxynitride Tunneling 10.1109/LED.2005.859673 IEEE Electron Device Letters 26 12 906-908 EDLED 2014-10-07T04:27:50Z 2014-10-07T04:27:50Z 2005-12 Article Ang, D.S., Wang, S., Ling, C.H. (2005-12). Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET. IEEE Electron Device Letters 26 (12) : 906-908. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.859673 07413106 http://scholarbank.nus.edu.sg/handle/10635/82307 000233681700016 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Activation energy Arrhenius equation Hole trapping Negative-bias temperature instability (NBTI) Oxynitride Tunneling
spellingShingle	Activation energy Arrhenius equation Hole trapping Negative-bias temperature instability (NBTI) Oxynitride Tunneling Ang, D.S. Wang, S. Ling, C.H. Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
description	10.1109/LED.2005.859673
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, D.S. Wang, S. Ling, C.H.
format	Article
author	Ang, D.S. Wang, S. Ling, C.H.
author_sort	Ang, D.S.
title	Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
title_short	Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
title_full	Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
title_fullStr	Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
title_full_unstemmed	Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
title_sort	evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-mosfet
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82307
_version_	1821211056786112512

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

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