Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

• Main Authors: Ang, D.S., Wang, S., Ling, C.H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Activation energy; Arrhenius equation; Hole trapping; Negative-bias temperature instability (NBTI); Oxynitride; Tunneling
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82307
• Institution: National University of Singapore

10.1109/LED.2005.859673