Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics

Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics

10.1088/0268-1242/21/10/004

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Bibliographic Details
Main Authors: Samanta, P., Man, T.Y., Chan, A.C.K., Zhang, Q., Zhu, C., Chan, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82322
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Institution: National University of Singapore
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Summary:10.1088/0268-1242/21/10/004

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