Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics

• Main Authors: Samanta, P., Man, T.Y., Chan, A.C.K., Zhang, Q., Zhu, C., Chan, M.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82322
• Institution: National University of Singapore

10.1088/0268-1242/21/10/004