Fabrication and properties of nanoporous GaN films

Fabrication and properties of nanoporous GaN films

10.1063/1.1774273

Saved in:

Bibliographic Details
Main Authors:	Wang, Y.D., Chua, S.J., Sander, M.S., Chen, P., Tripathy, S., Fonstad, C.G.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82334
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
by: Wang, Y.D., et al.
Published: (2014)

Investigation of optical properties of nanoporous GaN films
by: Vajpeyi, A.P., et al.
Published: (2014)

Threading dislocations annihilation in regrown GaN film on nanoporous GaN template
by: Soh, C.B., et al.
Published: (2014)

Optical activation of Eu ions in nanoporous GaN films
by: Vajpeyi, A.P., et al.
Published: (2016)

Luminescence and vibrational properties of erbium-implanted nanoporous GaN
by: Soh, C.B., et al.
Published: (2014)

Enhancement of erbium incorporation with implantation into nanoporous GaN
by: Soh, C.B., et al.
Published: (2014)

High quality GaN grown from a nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

High optical quality nanoporous GaN prepared by photoelectrochemical etching
by: Vajpeyi, A.P., et al.
Published: (2014)

Comparative study of optical properties of nanoporous GaN prepared by uv-assisted electrochemical and electroless etching
by: Vajpeyi, A.P., et al.
Published: (2014)

Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
by: Soh, C.B., et al.
Published: (2016)

Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

Annihilation of threading dislocations in regrown GaN on electrochemically etched nanoporous GaN template with optimization of buffer layer growth
by: Soh, C.B., et al.
Published: (2014)

Structural and optical properties of InGaN/GaN multiple quantum wells grown on nano-air-bridged GaN template
by: Zang, K.Y., et al.
Published: (2014)

Electronic and vibronic properties of n-type GaN: The influence of etching and annealing
by: Tripathy, S., et al.
Published: (2014)

Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth
by: Hartono, H., et al.
Published: (2014)

Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111)
by: Tripathy, S., et al.
Published: (2014)

Nanopore morphology in porous GaN template and its effect on the LEDs emission
by: Soh, C.B., et al.
Published: (2014)

Enhanced luminescence efficiency due to carrier localization in InGaNGaN heterostructures grown on nanoporous GaN templates
by: Soh, C.B., et al.
Published: (2011)

Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN
by: Soh, C.B., et al.
Published: (2014)

Channeling contrast microscopy of GaN and InGaN thin films
by: Osipowicz, T., et al.
Published: (2014)

Characterization of graded InGaN/GaN epilayers grown on sapphire
by: Song, T.L., et al.
Published: (2014)

InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
by: Zhou, H., et al.
Published: (2014)

Growth and Characterization of High Quality Continuous GaN Films on Si-Doped Cracked GaN Templates
by: Chua, S.J., et al.
Published: (2014)

Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs
by: Soh, C.B., et al.
Published: (2014)

Erratum: Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111) (Journal of Applied Physics (2002) 92 (3503))
by: Tripathy, S., et al.
Published: (2014)

Characterization of high quality continuous GaN films grown on Si-doped cracked GaN template
by: Soh, C.B., et al.
Published: (2014)

Strain relaxation in graded InGaN/GaN epilayers grown on sapphire
by: Song, T.L., et al.
Published: (2014)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

Morphological and structural analyses of plasma-induced damage to n-type GaN
by: Choi, H.W., et al.
Published: (2014)

Strong influence of SiO2 thin film on properties of GaN epilayers
by: Wang, X.C., et al.
Published: (2014)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

Fabrication and characterization of AIGaN/GaN HEMTs
by: HOY KIN MENG, DERRICK
Published: (2010)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing
by: Tripathy, S., et al.
Published: (2014)

Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
by: Soh, C.B., et al.
Published: (2014)

Dislocation scattering in n-GaN
by: Choi, H.W., et al.
Published: (2014)

Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates
by: Soh, C.B., et al.
Published: (2014)

Interplay of defects, microstructures, and surface stoichiometry during plasma processing of GaN
by: Ramam, A., et al.
Published: (2014)

Deposition, characterization, and device fabrication of GaN and AlN based thin film materials
by: Ashraf Uddin.
Published: (2008)

Micro-Raman scattering in laterally epitaxial overgrown GaN
by: Tripathy, S., et al.
Published: (2014)