Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well

Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well

10.1109/LED.2007.899763

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Bibliographic Details
Main Authors: Jiang, Y., Loh, W.Y., Chan, D.S.H., Xiong, Y.Z., Ren, C., Lim, Y.F., Lo, G.Q., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Electrical stress
Flicker noise
Interface traps
Si/SiGe dual-quantum well (DQW)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82368
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2007.899763

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