Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well

• Main Authors: Jiang, Y., Loh, W.Y., Chan, D.S.H., Xiong, Y.Z., Ren, C., Lim, Y.F., Lo, G.Q., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Electrical stress; Flicker noise; Interface traps; Si/SiGe dual-quantum well (DQW)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82368
• Institution: National University of Singapore

10.1109/LED.2007.899763