Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well

Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well

10.1109/LED.2007.899763

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書目詳細資料
Main Authors:	Jiang, Y., Loh, W.Y., Chan, D.S.H., Xiong, Y.Z., Ren, C., Lim, Y.F., Lo, G.Q., Kwong, D.-L.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	Electrical stress Flicker noise Interface traps Si/SiGe dual-quantum well (DQW)
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82368
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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