Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well
10.1109/LED.2007.899763
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Main Authors: | Jiang, Y., Loh, W.Y., Chan, D.S.H., Xiong, Y.Z., Ren, C., Lim, Y.F., Lo, G.Q., Kwong, D.-L. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82368 |
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Institution: | National University of Singapore |
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