Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well

10.1109/LED.2007.899763

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Bibliographic Details
Main Authors:	Jiang, Y., Loh, W.Y., Chan, D.S.H., Xiong, Y.Z., Ren, C., Lim, Y.F., Lo, G.Q., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Electrical stress Flicker noise Interface traps Si/SiGe dual-quantum well (DQW)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82368
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82368
record_format	dspace
spelling	sg-nus-scholar.10635-823682023-10-31T07:56:31Z Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well Jiang, Y. Loh, W.Y. Chan, D.S.H. Xiong, Y.Z. Ren, C. Lim, Y.F. Lo, G.Q. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Electrical stress Flicker noise Interface traps Si/SiGe dual-quantum well (DQW) 10.1109/LED.2007.899763 IEEE Electron Device Letters 28 7 603-605 EDLED 2014-10-07T04:28:32Z 2014-10-07T04:28:32Z 2007-07 Article Jiang, Y., Loh, W.Y., Chan, D.S.H., Xiong, Y.Z., Ren, C., Lim, Y.F., Lo, G.Q., Kwong, D.-L. (2007-07). Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well. IEEE Electron Device Letters 28 (7) : 603-605. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.899763 07413106 http://scholarbank.nus.edu.sg/handle/10635/82368 000247643900021 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Electrical stress Flicker noise Interface traps Si/SiGe dual-quantum well (DQW)
spellingShingle	Electrical stress Flicker noise Interface traps Si/SiGe dual-quantum well (DQW) Jiang, Y. Loh, W.Y. Chan, D.S.H. Xiong, Y.Z. Ren, C. Lim, Y.F. Lo, G.Q. Kwong, D.-L. Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well
description	10.1109/LED.2007.899763
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Jiang, Y. Loh, W.Y. Chan, D.S.H. Xiong, Y.Z. Ren, C. Lim, Y.F. Lo, G.Q. Kwong, D.-L.
format	Article
author	Jiang, Y. Loh, W.Y. Chan, D.S.H. Xiong, Y.Z. Ren, C. Lim, Y.F. Lo, G.Q. Kwong, D.-L.
author_sort	Jiang, Y.
title	Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well
title_short	Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well
title_full	Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well
title_fullStr	Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well
title_full_unstemmed	Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well
title_sort	flicker noise and its degradation characteristics under electrical stress in mosfets with thin strained-si/sige dual-quantum well
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82368
_version_	1781784120369610752

Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum well

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