Fully silicided NiSi gate on La2O3 MOSFETs

• Main Authors: Lin, C.Y., Ma, M.W., Chin, A., Yeo, Y.C., Zhu, C., Li, M.F., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: CoSi2; La2O3; MOSFET; NiSi
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82391
• Institution: National University of Singapore

10.1109/LED.2003.812569