Fully silicided NiSi gate on La2O3 MOSFETs

Fully silicided NiSi gate on La2O3 MOSFETs

10.1109/LED.2003.812569

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Bibliographic Details
Main Authors: Lin, C.Y., Ma, M.W., Chin, A., Yeo, Y.C., Zhu, C., Li, M.F., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
CoSi2
La2O3
MOSFET
NiSi
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82391
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Institution: National University of Singapore

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