Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and Modeling

Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and Modeling

10.1109/TED.2003.819371

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書目詳細資料
Main Authors:	Ang, D.S., Lun, Z., Ling, C.H.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	Generation-recombination (G-R) noise Lorentzian Low-frequency noise Shot-noise Silicon-on-insulator (SOI) SIMOX
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82406
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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