Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique

10.1109/LED.2008.922548

Saved in:

Bibliographic Details
Main Authors:	Jiang, Y., Singh, N., Liow, T.Y., Loh, W.Y., Balakumar, S., Hoe, K.M., Tung, C.H., Bliznetsov, V., Rustagi, S.C., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Ge condensation Heterostructure SiGe nanowires (SGNWs)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82409
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82409
record_format	dspace
spelling	sg-nus-scholar.10635-824092024-11-11T07:32:37Z Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique Jiang, Y. Singh, N. Liow, T.Y. Loh, W.Y. Balakumar, S. Hoe, K.M. Tung, C.H. Bliznetsov, V. Rustagi, S.C. Lo, G.Q. Chan, D.S.H. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING Ge condensation Heterostructure SiGe nanowires (SGNWs) 10.1109/LED.2008.922548 IEEE Electron Device Letters 29 6 595-598 EDLED 2014-10-07T04:29:03Z 2014-10-07T04:29:03Z 2008-06 Article Jiang, Y., Singh, N., Liow, T.Y., Loh, W.Y., Balakumar, S., Hoe, K.M., Tung, C.H., Bliznetsov, V., Rustagi, S.C., Lo, G.Q., Chan, D.S.H., Kwong, D.L. (2008-06). Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique. IEEE Electron Device Letters 29 (6) : 595-598. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.922548 07413106 http://scholarbank.nus.edu.sg/handle/10635/82409 000256189000018 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Ge condensation Heterostructure SiGe nanowires (SGNWs)
spellingShingle	Ge condensation Heterostructure SiGe nanowires (SGNWs) Jiang, Y. Singh, N. Liow, T.Y. Loh, W.Y. Balakumar, S. Hoe, K.M. Tung, C.H. Bliznetsov, V. Rustagi, S.C. Lo, G.Q. Chan, D.S.H. Kwong, D.L. Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
description	10.1109/LED.2008.922548
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Jiang, Y. Singh, N. Liow, T.Y. Loh, W.Y. Balakumar, S. Hoe, K.M. Tung, C.H. Bliznetsov, V. Rustagi, S.C. Lo, G.Q. Chan, D.S.H. Kwong, D.L.
format	Article
author	Jiang, Y. Singh, N. Liow, T.Y. Loh, W.Y. Balakumar, S. Hoe, K.M. Tung, C.H. Bliznetsov, V. Rustagi, S.C. Lo, G.Q. Chan, D.S.H. Kwong, D.L.
author_sort	Jiang, Y.
title	Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
title_short	Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
title_full	Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
title_fullStr	Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
title_full_unstemmed	Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique
title_sort	ge-rich (70%) sige nanowire mosfet fabricated using pattern-dependent ge-condensation technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82409
_version_	1821209529622200320

Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique

Similar Items