Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique

Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique

10.1109/LED.2008.922548

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Bibliographic Details
Main Authors: Jiang, Y., Singh, N., Liow, T.Y., Loh, W.Y., Balakumar, S., Hoe, K.M., Tung, C.H., Bliznetsov, V., Rustagi, S.C., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ge condensation
Heterostructure
SiGe nanowires (SGNWs)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82409
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Institution: National University of Singapore

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