Ge-rich (70%) SiGe nanowire MOSFET fabricated using pattern-dependent Ge-condensation technique

• Main Authors: Jiang, Y., Singh, N., Liow, T.Y., Loh, W.Y., Balakumar, S., Hoe, K.M., Tung, C.H., Bliznetsov, V., Rustagi, S.C., Lo, G.Q., Chan, D.S.H., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Ge condensation; Heterostructure; SiGe nanowires (SGNWs)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82409
• Institution: National University of Singapore

10.1109/LED.2008.922548