Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration

10.1109/TED.2013.2287031

Saved in:

Bibliographic Details
Main Authors:	Yang, Y., Han, G., Guo, P., Wang, W., Gong, X., Wang, L., Low, K.L., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Band-to-band tunneling direct bandgap germanium-tin p-channel tunneling field-effect transistor (p-TFET)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82418
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82418
record_format	dspace
spelling	sg-nus-scholar.10635-824182024-11-08T16:46:19Z Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration Yang, Y. Han, G. Guo, P. Wang, W. Gong, X. Wang, L. Low, K.L. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Band-to-band tunneling direct bandgap germanium-tin p-channel tunneling field-effect transistor (p-TFET) 10.1109/TED.2013.2287031 IEEE Transactions on Electron Devices 60 12 4048-4056 IETDA 2014-10-07T04:29:10Z 2014-10-07T04:29:10Z 2013-12 Article Yang, Y., Han, G., Guo, P., Wang, W., Gong, X., Wang, L., Low, K.L., Yeo, Y.-C. (2013-12). Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration. IEEE Transactions on Electron Devices 60 (12) : 4048-4056. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2287031 00189383 http://scholarbank.nus.edu.sg/handle/10635/82418 000327584400012 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Band-to-band tunneling direct bandgap germanium-tin p-channel tunneling field-effect transistor (p-TFET)
spellingShingle	Band-to-band tunneling direct bandgap germanium-tin p-channel tunneling field-effect transistor (p-TFET) Yang, Y. Han, G. Guo, P. Wang, W. Gong, X. Wang, L. Low, K.L. Yeo, Y.-C. Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
description	10.1109/TED.2013.2287031
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yang, Y. Han, G. Guo, P. Wang, W. Gong, X. Wang, L. Low, K.L. Yeo, Y.-C.
format	Article
author	Yang, Y. Han, G. Guo, P. Wang, W. Gong, X. Wang, L. Low, K.L. Yeo, Y.-C.
author_sort	Yang, Y.
title	Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
title_short	Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
title_full	Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
title_fullStr	Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
title_full_unstemmed	Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
title_sort	germanium-tin p-channel tunneling field-effect transistor: device design and technology demonstration
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82418
_version_	1821214203449442304

Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration

Similar Items