Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration

Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration

10.1109/TED.2013.2287031

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Bibliographic Details
Main Authors: Yang, Y., Han, G., Guo, P., Wang, W., Gong, X., Wang, L., Low, K.L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Band-to-band tunneling
direct bandgap
germanium-tin
p-channel tunneling field-effect transistor (p-TFET)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82418
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Institution: National University of Singapore

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