High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applications

10.1149/2.085112jes

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Bibliographic Details
Main Authors:	Phung, T.H., Srinivasan, D.K., Steinmann, P., Wise, R., Yu, M.-B., Yeo, Y.-C., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82452
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Institution:	National University of Singapore

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