High performance metal-insulator-metal capacitors with Er2O 3 on ALD SiO2 for RF applications
10.1149/2.085112jes
Saved in:
Main Authors: | Phung, T.H., Srinivasan, D.K., Steinmann, P., Wise, R., Yu, M.-B., Yeo, Y.-C., Zhu, C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82452 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
by: Chen, J.-D., et al.
Published: (2014) -
Modeling the negative quadratic VCC of SiO2 in MIM capacitor
by: Phung, T.H., et al.
Published: (2014) -
High-K Dielectrics in Metal Insulator Metal (MIM) Capacitors for RF Applications
by: PHUNG THANH HOA
Published: (2012) -
Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers
by: Kim, S.-J., et al.
Published: (2014) -
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
by: Ding, S.-J., et al.
Published: (2014)