III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin

10.1109/LED.2010.2091672

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Bibliographic Details
Main Authors:	Chin, H.-C., Gong, X., Wang, L., Lee, H.K., Shi, L., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	FinFET high mobility InGaAs MOSFET multiple-gate field-effect transistor (MuGFET) retrograde well
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82490
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82490
record_format	dspace
spelling	sg-nus-scholar.10635-824902023-10-27T08:31:16Z III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin Chin, H.-C. Gong, X. Wang, L. Lee, H.K. Shi, L. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING FinFET high mobility InGaAs MOSFET multiple-gate field-effect transistor (MuGFET) retrograde well 10.1109/LED.2010.2091672 IEEE Electron Device Letters 32 2 146-148 EDLED 2014-10-07T04:30:00Z 2014-10-07T04:30:00Z 2011-02 Article Chin, H.-C., Gong, X., Wang, L., Lee, H.K., Shi, L., Yeo, Y.-C. (2011-02). III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin. IEEE Electron Device Letters 32 (2) : 146-148. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2091672 07413106 http://scholarbank.nus.edu.sg/handle/10635/82490 000286677700012 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	FinFET high mobility InGaAs MOSFET multiple-gate field-effect transistor (MuGFET) retrograde well
spellingShingle	FinFET high mobility InGaAs MOSFET multiple-gate field-effect transistor (MuGFET) retrograde well Chin, H.-C. Gong, X. Wang, L. Lee, H.K. Shi, L. Yeo, Y.-C. III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
description	10.1109/LED.2010.2091672
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chin, H.-C. Gong, X. Wang, L. Lee, H.K. Shi, L. Yeo, Y.-C.
format	Article
author	Chin, H.-C. Gong, X. Wang, L. Lee, H.K. Shi, L. Yeo, Y.-C.
author_sort	Chin, H.-C.
title	III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
title_short	III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
title_full	III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
title_fullStr	III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
title_full_unstemmed	III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
title_sort	iii-v multiple-gate field-effect transistors with high-mobility in 0.7ga0.3as channel and epi-controlled retrograde-doped fin
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82490
_version_	1781784152946769920

III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin

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