III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin
10.1109/LED.2010.2091672
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82490 |
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Institution: | National University of Singapore |
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