III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin

III-V multiple-gate field-effect transistors with high-mobility In 0.7Ga0.3As channel and epi-controlled retrograde-doped Fin

10.1109/LED.2010.2091672

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Bibliographic Details
Main Authors: Chin, H.-C., Gong, X., Wang, L., Lee, H.K., Shi, L., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
FinFET
high mobility
InGaAs
MOSFET
multiple-gate field-effect transistor (MuGFET)
retrograde well
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82490
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Institution: National University of Singapore

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