Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivation

Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivation

10.1149/1.3489946

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Bibliographic Details
Main Authors: Oh, H.-J., Suleiman, S.A.B., Lee, S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82554
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Institution: National University of Singapore
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Summary:10.1149/1.3489946

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