Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

10.1109/LED.2005.855419

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Bibliographic Details
Main Authors:	Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	MOSFETs Negative bias temperature instability (NBTI) Silicon oxynitride (SiON)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82557
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82557
record_format	dspace
spelling	sg-nus-scholar.10635-825572023-10-25T23:18:11Z Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric Yang, T. Shen, C. Li, M.F. Ang, C.H. Zhu, C.X. Yeo, Y.-C. Samudra, G. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING MOSFETs Negative bias temperature instability (NBTI) Silicon oxynitride (SiON) 10.1109/LED.2005.855419 IEEE Electron Device Letters 26 10 758-760 EDLED 2014-10-07T04:30:47Z 2014-10-07T04:30:47Z 2005-10 Article Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Kwong, D.-L. (2005-10). Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric. IEEE Electron Device Letters 26 (10) : 758-760. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.855419 07413106 http://scholarbank.nus.edu.sg/handle/10635/82557 000232208700020 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	MOSFETs Negative bias temperature instability (NBTI) Silicon oxynitride (SiON)
spellingShingle	MOSFETs Negative bias temperature instability (NBTI) Silicon oxynitride (SiON) Yang, T. Shen, C. Li, M.F. Ang, C.H. Zhu, C.X. Yeo, Y.-C. Samudra, G. Kwong, D.-L. Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
description	10.1109/LED.2005.855419
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yang, T. Shen, C. Li, M.F. Ang, C.H. Zhu, C.X. Yeo, Y.-C. Samudra, G. Kwong, D.-L.
format	Article
author	Yang, T. Shen, C. Li, M.F. Ang, C.H. Zhu, C.X. Yeo, Y.-C. Samudra, G. Kwong, D.-L.
author_sort	Yang, T.
title	Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
title_short	Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
title_full	Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
title_fullStr	Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
title_full_unstemmed	Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
title_sort	interface trap passivation effect in nbti measurement for p-mosfet with sion gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82557
_version_	1781784169843523584

Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

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