Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

• Main Authors: Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Kwong, D.-L.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: MOSFETs; Negative bias temperature instability (NBTI); Silicon oxynitride (SiON)
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82557
• 機構: National University of Singapore

10.1109/LED.2005.855419