Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric

• Main Authors: Yang, T., Shen, C., Li, M.F., Ang, C.H., Zhu, C.X., Yeo, Y.-C., Samudra, G., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: MOSFETs; Negative bias temperature instability (NBTI); Silicon oxynitride (SiON)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82557
• Institution: National University of Singapore

10.1109/LED.2005.855419