Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing

10.1063/1.1482423

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Bibliographic Details
Main Authors:	Zhao, H.B., Pey, K.L., Choi, W.K., Chattopadhyay, S., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82561
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82561
record_format	dspace
spelling	sg-nus-scholar.10635-825612023-10-25T23:18:06Z Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing Zhao, H.B. Pey, K.L. Choi, W.K. Chattopadhyay, S. Fitzgerald, E.A. Antoniadis, D.A. Lee, P.S. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1482423 Journal of Applied Physics 92 1 214-217 JAPIA 2014-10-07T04:30:49Z 2014-10-07T04:30:49Z 2002-07-01 Article Zhao, H.B., Pey, K.L., Choi, W.K., Chattopadhyay, S., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S. (2002-07-01). Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing. Journal of Applied Physics 92 (1) : 214-217. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1482423 00218979 http://scholarbank.nus.edu.sg/handle/10635/82561 000176314800034 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1482423
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhao, H.B. Pey, K.L. Choi, W.K. Chattopadhyay, S. Fitzgerald, E.A. Antoniadis, D.A. Lee, P.S.
format	Article
author	Zhao, H.B. Pey, K.L. Choi, W.K. Chattopadhyay, S. Fitzgerald, E.A. Antoniadis, D.A. Lee, P.S.
spellingShingle	Zhao, H.B. Pey, K.L. Choi, W.K. Chattopadhyay, S. Fitzgerald, E.A. Antoniadis, D.A. Lee, P.S. Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing
author_sort	Zhao, H.B.
title	Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing
title_short	Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing
title_full	Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing
title_fullStr	Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing
title_full_unstemmed	Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing
title_sort	interfacial reactions of ni on si 1-xge x (x=0.2,0.3) at low temperature by rapid thermal annealing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82561
_version_	1781784170628907008

Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing

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