Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing

• Main Authors: Zhao, H.B., Pey, K.L., Choi, W.K., Chattopadhyay, S., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82561
• Institution: National University of Singapore

10.1063/1.1482423