Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealing
10.1063/1.1482423
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Main Authors: | Zhao, H.B., Pey, K.L., Choi, W.K., Chattopadhyay, S., Fitzgerald, E.A., Antoniadis, D.A., Lee, P.S. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82561 |
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Institution: | National University of Singapore |
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