Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers
10.1143/JJAP.51.02BD08
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sg-nus-scholar.10635-827282023-10-30T20:19:39Z Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers Gyanathan, A. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1143/JJAP.51.02BD08 Japanese Journal of Applied Physics 51 2 PART 2 - 2014-10-07T04:32:48Z 2014-10-07T04:32:48Z 2012-02 Article Gyanathan, A., Yeo, Y.-C. (2012-02). Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BD08 00214922 http://scholarbank.nus.edu.sg/handle/10635/82728 000303481400030 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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NUS Library |
| collection |
ScholarBank@NUS |
| description |
10.1143/JJAP.51.02BD08 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Gyanathan, A. Yeo, Y.-C. |
| format |
Article |
| author |
Gyanathan, A. Yeo, Y.-C. |
| spellingShingle |
Gyanathan, A. Yeo, Y.-C. Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers |
| author_sort |
Gyanathan, A. |
| title |
Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers |
| title_short |
Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers |
| title_full |
Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers |
| title_fullStr |
Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers |
| title_full_unstemmed |
Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers |
| title_sort |
multi-level phase change memory cells with sin or ta 2o 5 barrier layers |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82728 |
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1781784208997351424 |