Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers

Multi-level phase change memory cells with SiN or Ta 2O 5 Barrier Layers

10.1143/JJAP.51.02BD08

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Bibliographic Details
Main Authors: Gyanathan, A., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82728
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Institution: National University of Singapore
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