N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD

10.1016/S0038-1101(01)00238-6

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Bibliographic Details
Main Authors: Tan, C.S., Choi, W.K., Bera, L.K., Pey, K.L., Antoniadis, D.A., Fitzgerald, E.A., Currie, M.T., Maiti, C.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82738
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Institution: National University of Singapore
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