N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer

N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer

10.1109/LED.2007.908495

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Bibliographic Details
Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Etch-stop layer (ESL)
Fin-shaped field-effect transistor (FinFET)
Multiple-gate transistor
Silicon-carbon (SiC)
Strain
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82746
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2007.908495

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