N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer

10.1109/LED.2007.908495

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Bibliographic Details
Main Authors:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Etch-stop layer (ESL) Fin-shaped field-effect transistor (FinFET) Multiple-gate transistor Silicon-carbon (SiC) Strain Stress
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82746
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82746
record_format	dspace
spelling	sg-nus-scholar.10635-827462023-10-29T22:29:36Z N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Tung, C.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Etch-stop layer (ESL) Fin-shaped field-effect transistor (FinFET) Multiple-gate transistor Silicon-carbon (SiC) Strain Stress 10.1109/LED.2007.908495 IEEE Electron Device Letters 28 11 1014-1017 EDLED 2014-10-07T04:33:00Z 2014-10-07T04:33:00Z 2007-11 Article Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C. (2007-11). N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer. IEEE Electron Device Letters 28 (11) : 1014-1017. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.908495 07413106 http://scholarbank.nus.edu.sg/handle/10635/82746 000250524200025 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Etch-stop layer (ESL) Fin-shaped field-effect transistor (FinFET) Multiple-gate transistor Silicon-carbon (SiC) Strain Stress
spellingShingle	Etch-stop layer (ESL) Fin-shaped field-effect transistor (FinFET) Multiple-gate transistor Silicon-carbon (SiC) Strain Stress Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Tung, C.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
description	10.1109/LED.2007.908495
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Tung, C.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
format	Article
author	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Tung, C.-H. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C.
author_sort	Liow, T.-Y.
title	N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
title_short	N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
title_full	N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
title_fullStr	N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
title_full_unstemmed	N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer
title_sort	n-channel (110)-sidewall strained finfets with silicon-carbon source and drain stressors and tensile capping layer
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82746
_version_	1781784212925317120

N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer

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