N-Channel (110)-sidewall strained FinFETs with silicon-carbon source and drain stressors and tensile capping layer

• Main Authors: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Tung, C.-H., Samudra, G.S., Balasubramanian, N., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Etch-stop layer (ESL); Fin-shaped field-effect transistor (FinFET); Multiple-gate transistor; Silicon-carbon (SiC); Strain; Stress
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82746
• Institution: National University of Singapore

10.1109/LED.2007.908495