Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performance

Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performance

10.1109/TED.2004.837011

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Bibliographic Details
Main Authors: Chen, J.H., Wang, Y.Q., Yoo, W.J., Yeo, Y.-C., Samudra, G., Chan, D.S.H., Du, A.Y., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82777
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Institution: National University of Singapore
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Summary:10.1109/TED.2004.837011

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