N-type Schottky barrier source/drain MOSFET using Ytterbium silicide

10.1109/LED.2004.831582

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Bibliographic Details
Main Authors:	Zhu, S., Chen, J., Li, M.-F., Lee, S.J., Singh, J., Zhu, C.X., Du, A., Tung, C.H., Chin, A., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82789
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Institution:	National University of Singapore

Description
Summary:	10.1109/LED.2004.831582

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