N-type Schottky barrier source/drain MOSFET using Ytterbium silicide

• Main Authors: Zhu, S., Chen, J., Li, M.-F., Lee, S.J., Singh, J., Zhu, C.X., Du, A., Tung, C.H., Chin, A., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82789
• Institution: National University of Singapore

10.1109/LED.2004.831582