Physical and electrical characteristics of hafnium oxide films on AlGaN/GaN heterostructure grown by pulsed laser deposition

• Main Authors: Tian, F., Chor, E.F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: AlGaN/GaN; Hafnium oxide (HfO2); Heterostructure field effect transistors (HFETs); Pulsed laser deposition (PLD)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82902
• Institution: National University of Singapore

10.1016/j.tsf.2010.03.106