Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

10.1063/1.1579550

Saved in:
Bibliographic Details
Main Authors: Hu, H., Zhu, C., Lu, Y.F., Wu, Y.H., Liew, T., Li, M.F., Cho, B.J., Choi, W.K., Yakovlev, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82904
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1063/1.1579550

Similar Items