Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications

• Main Authors: Hu, H., Zhu, C., Lu, Y.F., Wu, Y.H., Liew, T., Li, M.F., Cho, B.J., Choi, W.K., Yakovlev, N.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82904
• Institution: National University of Singapore

10.1063/1.1579550