Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications

10.1109/TED.2009.2030539

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Main Authors: Chen, J.-D., Yang, J.-J., Wise, R., Steinmann, P., Yu, M.-B., Zhu, C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/82905
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-829052024-11-13T14:46:56Z Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications Chen, J.-D. Yang, J.-J. Wise, R. Steinmann, P. Yu, M.-B. Zhu, C. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Canceling effect Capacitor Metal-insulator-metal (MIM) SiO2 Sm2O3 10.1109/TED.2009.2030539 IEEE Transactions on Electron Devices 56 11 2683-2691 IETDA 2014-10-07T04:34:54Z 2014-10-07T04:34:54Z 2009 Article Chen, J.-D., Yang, J.-J., Wise, R., Steinmann, P., Yu, M.-B., Zhu, C., Yeo, Y.-C. (2009). Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications. IEEE Transactions on Electron Devices 56 (11) : 2683-2691. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030539 00189383 http://scholarbank.nus.edu.sg/handle/10635/82905 000271019500040 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Canceling effect
Capacitor
Metal-insulator-metal (MIM)
SiO2
Sm2O3
spellingShingle Canceling effect
Capacitor
Metal-insulator-metal (MIM)
SiO2
Sm2O3
Chen, J.-D.
Yang, J.-J.
Wise, R.
Steinmann, P.
Yu, M.-B.
Zhu, C.
Yeo, Y.-C.
Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
description 10.1109/TED.2009.2030539
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chen, J.-D.
Yang, J.-J.
Wise, R.
Steinmann, P.
Yu, M.-B.
Zhu, C.
Yeo, Y.-C.
format Article
author Chen, J.-D.
Yang, J.-J.
Wise, R.
Steinmann, P.
Yu, M.-B.
Zhu, C.
Yeo, Y.-C.
author_sort Chen, J.-D.
title Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
title_short Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
title_full Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
title_fullStr Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
title_full_unstemmed Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications
title_sort physical and electrical characterization of metal-insulator-metal capacitors with sm2o3 and sm2 o3/sio2 laminated dielectrics for analog circuit applications
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82905
_version_ 1821222897961664512