Performance Improvement of Sm2O3 MIM capacitors by using plasma treatment after dielectric formation

by Yang, J.-J., Chen, J.-D., Wise, R., Yeo, Y.-C., Zhu, C.
Published 2014

Physical and electrical characterization of metal-insulator-metal capacitors with Sm2O3 and Sm2 O3/SiO2 laminated dielectrics for analog circuit applications

by Chen, J.-D., Yang, J.-J., Wise, R., Steinmann, P., Yu, M.-B., Zhu, C., Yeo, Y.-C.
Published 2014

Some issues in advanced CMOS gate stack performance and reliability

by Li, M.-F., Wang, X.P., Shen, C., Yang, J.J., Chen, J.D., Yu, H.Y., Zhu, C., Huang, D.
Published 2014

Effective modulation of quadratic voltage coefficient of capacitance in MIM capacitors using Sm2O3SiO2 dielectric stack

by Yang, J.-J., Chen, J.-D., Wise, R., Steinmann, P., Yu, M.-B., Kwong, D.-L., Li, M.-F., Yeo, Y.-C., Zhu, C.
Published 2014

Yb-doped Ni FUSI for the n-MOSFETs gate electrode application

by Chen, J.D., Yu, H.Y., Li, M.F., Kwong, D.-L., van Dal, M.J.H., Kittl, J.A., Lauwers, A., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications

by Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L.
Published 2014

Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices

by Yu, H.Y., Kang, J.F., Chen, J.D., Ren, C., Hou, Y.T., Whang, S.J., Li, M.-F., Chan, D.S.H., Bera, K.L., Tung, C.H., Du, A., Kwong, D.-L.
Published 2014

Widely tunable work function TaN/Ru stacking layer on HfLaO gate dielectric

by Wang, X.P., Li, M.-F., Yu, H.Y., Yang, J.J., Chen, J.D., Zhu, C.X., Du, A.Y., Loh, W.Y., Biesemans, S., Chin, A., Lo, G.Q., Kwong, D.-L.
Published 2014

Modulation of the Ni FUSI workfunction by Yb doping: From midgap to n-type band-edge

by Yu, H.Y., Chen, J.D., Li, M.F., Lee, S.J., Kwong, D.L., Van Dal, M., Kittl, J.A., Lauwers, A., Augendre, E., Kubicek, S., Zhao, C., Bender, H., Brijs, B., Geenen, L., Benedetti, A., Absil, P., Jurczak, M., Biesemans, S.
Published 2014

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

by Zhu, S., Yu, H.Y., Chen, J.D., Whang, S.J., Chen, J.H., Shen, C., Zhu, C., Lee, S.J., Li, M.F., Chan, D.S.H., Yoo, W.J., Du, A., Tung, C.H., Singh, J., Chin, A., Kwong, D.L.
Published 2014

Demonstration of a new approach towards 0.25V Low-Vt CMOS using Ni-based FUSI

by Yu, H.Y., Kittl, J.A., Lauwers, A., Singanamalla, R., Demeurisse, C., Kubicek, S., Augendre, E., Veloso, A., Brus, S., Vrancken, C., Hoffmann, T., Mertens, S., Onsia, B., Verbeeck, R., Demand, M., Rothchild, A., Froment, B., Van Dal, M., De Meyer, K., Li, M.F., Chen, J.D., Jurczak, M., Absil, P.P., Biesemans, S.
Published 2014