Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric

10.1063/1.1874312

Saved in:

Bibliographic Details
Main Authors:	Shen, C., Li, M.F., Yu, H.Y., Wang, X.P., Yeo, Y.-C., Chan, D.S.H., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82908
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82908
record_format	dspace
spelling	sg-nus-scholar.10635-829082023-10-27T08:35:19Z Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric Shen, C. Li, M.F. Yu, H.Y. Wang, X.P. Yeo, Y.-C. Chan, D.S.H. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1874312 Applied Physics Letters 86 9 1-3 APPLA 2014-10-07T04:34:56Z 2014-10-07T04:34:56Z 2005-02-28 Article Shen, C., Li, M.F., Yu, H.Y., Wang, X.P., Yeo, Y.-C., Chan, D.S.H., Kwong, D.-L. (2005-02-28). Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric. Applied Physics Letters 86 (9) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1874312 00036951 http://scholarbank.nus.edu.sg/handle/10635/82908 000228991600074 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1874312
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Shen, C. Li, M.F. Yu, H.Y. Wang, X.P. Yeo, Y.-C. Chan, D.S.H. Kwong, D.-L.
format	Article
author	Shen, C. Li, M.F. Yu, H.Y. Wang, X.P. Yeo, Y.-C. Chan, D.S.H. Kwong, D.-L.
spellingShingle	Shen, C. Li, M.F. Yu, H.Y. Wang, X.P. Yeo, Y.-C. Chan, D.S.H. Kwong, D.-L. Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric
author_sort	Shen, C.
title	Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric
title_short	Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric
title_full	Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric
title_fullStr	Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric
title_full_unstemmed	Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric
title_sort	physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with hfo 2 gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82908
_version_	1781784249985138688

Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric

Similar Items