Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric

• Main Authors: Shen, C., Li, M.F., Yu, H.Y., Wang, X.P., Yeo, Y.-C., Chan, D.S.H., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82908
• Institution: National University of Singapore

10.1063/1.1874312