Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body

10.1109/LED.2006.880640

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Bibliographic Details
Main Authors:	Lim, Y.F., Xiong, Y.Z., Singh, N., Yang, R., Jiang, Y., Chan, D.S.H., Loh, W.Y., Bera, L.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	FinFET Flicker (1/f) noise Gate-all-around (GAA) Noise Random telegraph signals (RTS)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82964
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82964
record_format	dspace
spelling	sg-nus-scholar.10635-829642024-11-11T07:32:39Z Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body Lim, Y.F. Xiong, Y.Z. Singh, N. Yang, R. Jiang, Y. Chan, D.S.H. Loh, W.Y. Bera, L.K. Lo, G.Q. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING FinFET Flicker (1/f) noise Gate-all-around (GAA) Noise Random telegraph signals (RTS) 10.1109/LED.2006.880640 IEEE Electron Device Letters 27 9 765-768 EDLED 2014-10-07T04:35:36Z 2014-10-07T04:35:36Z 2006-09 Article Lim, Y.F., Xiong, Y.Z., Singh, N., Yang, R., Jiang, Y., Chan, D.S.H., Loh, W.Y., Bera, L.K., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2006-09). Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body. IEEE Electron Device Letters 27 (9) : 765-768. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.880640 07413106 http://scholarbank.nus.edu.sg/handle/10635/82964 000240008800019 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	FinFET Flicker (1/f) noise Gate-all-around (GAA) Noise Random telegraph signals (RTS)
spellingShingle	FinFET Flicker (1/f) noise Gate-all-around (GAA) Noise Random telegraph signals (RTS) Lim, Y.F. Xiong, Y.Z. Singh, N. Yang, R. Jiang, Y. Chan, D.S.H. Loh, W.Y. Bera, L.K. Lo, G.Q. Balasubramanian, N. Kwong, D.-L. Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
description	10.1109/LED.2006.880640
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lim, Y.F. Xiong, Y.Z. Singh, N. Yang, R. Jiang, Y. Chan, D.S.H. Loh, W.Y. Bera, L.K. Lo, G.Q. Balasubramanian, N. Kwong, D.-L.
format	Article
author	Lim, Y.F. Xiong, Y.Z. Singh, N. Yang, R. Jiang, Y. Chan, D.S.H. Loh, W.Y. Bera, L.K. Lo, G.Q. Balasubramanian, N. Kwong, D.-L.
author_sort	Lim, Y.F.
title	Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
title_short	Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
title_full	Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
title_fullStr	Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
title_full_unstemmed	Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body
title_sort	random telegraph signal noise in gate-all-around si-finfet with ultranarrow body
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82964
_version_	1821221454286422016

Random telegraph signal noise in gate-all-around Si-FinFET with ultranarrow body

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