Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

10.1116/1.3592211

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Bibliographic Details
Main Authors:	Zhang, X., Guo, H., Lin, H.-Y., Cheng, C.-C., Ko, C.-H., Wann, C.H., Luo, G.-L., Chang, C.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Chin, H.-C., Gong, X., Koh, S.-M., Lim, P.S.Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83003
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83003
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spelling	sg-nus-scholar.10635-830032024-11-08T16:45:07Z Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors Zhang, X. Guo, H. Lin, H.-Y. Cheng, C.-C. Ko, C.-H. Wann, C.H. Luo, G.-L. Chang, C.-Y. Chien, C.-H. Han, Z.-Y. Huang, S.-C. Chin, H.-C. Gong, X. Koh, S.-M. Lim, P.S.Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1116/1.3592211 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 3 - JVTBD 2014-10-07T04:36:05Z 2014-10-07T04:36:05Z 2011-05 Article Zhang, X., Guo, H., Lin, H.-Y., Cheng, C.-C., Ko, C.-H., Wann, C.H., Luo, G.-L., Chang, C.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Chin, H.-C., Gong, X., Koh, S.-M., Lim, P.S.Y., Yeo, Y.-C. (2011-05). Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 29 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3592211 10711023 http://scholarbank.nus.edu.sg/handle/10635/83003 000291111300033 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1116/1.3592211
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, X. Guo, H. Lin, H.-Y. Cheng, C.-C. Ko, C.-H. Wann, C.H. Luo, G.-L. Chang, C.-Y. Chien, C.-H. Han, Z.-Y. Huang, S.-C. Chin, H.-C. Gong, X. Koh, S.-M. Lim, P.S.Y. Yeo, Y.-C.
format	Article
author	Zhang, X. Guo, H. Lin, H.-Y. Cheng, C.-C. Ko, C.-H. Wann, C.H. Luo, G.-L. Chang, C.-Y. Chien, C.-H. Han, Z.-Y. Huang, S.-C. Chin, H.-C. Gong, X. Koh, S.-M. Lim, P.S.Y. Yeo, Y.-C.
spellingShingle	Zhang, X. Guo, H. Lin, H.-Y. Cheng, C.-C. Ko, C.-H. Wann, C.H. Luo, G.-L. Chang, C.-Y. Chien, C.-H. Han, Z.-Y. Huang, S.-C. Chin, H.-C. Gong, X. Koh, S.-M. Lim, P.S.Y. Yeo, Y.-C. Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
author_sort	Zhang, X.
title	Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
title_short	Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
title_full	Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
title_fullStr	Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
title_full_unstemmed	Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
title_sort	self-aligned contact metallization technology for iii-v metal-oxide-semiconductor field effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83003
_version_	1821183224470044672

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

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