Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

10.1116/1.3592211

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Bibliographic Details
Main Authors:	Zhang, X., Guo, H., Lin, H.-Y., Cheng, C.-C., Ko, C.-H., Wann, C.H., Luo, G.-L., Chang, C.-Y., Chien, C.-H., Han, Z.-Y., Huang, S.-C., Chin, H.-C., Gong, X., Koh, S.-M., Lim, P.S.Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83003
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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