Si-nanowire based gate-all-around nonvolatile SONOS memory cell

10.1109/LED.2008.920267

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Bibliographic Details
Main Authors:	Fu, J., Singh, N., Buddharaju, K.D., Teo, S.H.G., Shen, C., Jiang, Y., Zhu, C.X., Yu, M.B., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Gnani, E., Baccarani, G.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Gate-all-around (GAA) Nanowire (NW) Nonvolatile memory (NVM) Silicon-oxide-nitride-oxide-silicon (SONOS)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83028
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83028
record_format	dspace
spelling	sg-nus-scholar.10635-830282023-10-29T20:58:51Z Si-nanowire based gate-all-around nonvolatile SONOS memory cell Fu, J. Singh, N. Buddharaju, K.D. Teo, S.H.G. Shen, C. Jiang, Y. Zhu, C.X. Yu, M.B. Lo, G.Q. Balasubramanian, N. Kwong, D.L. Gnani, E. Baccarani, G. ELECTRICAL & COMPUTER ENGINEERING Gate-all-around (GAA) Nanowire (NW) Nonvolatile memory (NVM) Silicon-oxide-nitride-oxide-silicon (SONOS) 10.1109/LED.2008.920267 IEEE Electron Device Letters 29 5 518-521 EDLED 2014-10-07T04:36:25Z 2014-10-07T04:36:25Z 2008-05 Article Fu, J., Singh, N., Buddharaju, K.D., Teo, S.H.G., Shen, C., Jiang, Y., Zhu, C.X., Yu, M.B., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Gnani, E., Baccarani, G. (2008-05). Si-nanowire based gate-all-around nonvolatile SONOS memory cell. IEEE Electron Device Letters 29 (5) : 518-521. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920267 07413106 http://scholarbank.nus.edu.sg/handle/10635/83028 000255317400031 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Gate-all-around (GAA) Nanowire (NW) Nonvolatile memory (NVM) Silicon-oxide-nitride-oxide-silicon (SONOS)
spellingShingle	Gate-all-around (GAA) Nanowire (NW) Nonvolatile memory (NVM) Silicon-oxide-nitride-oxide-silicon (SONOS) Fu, J. Singh, N. Buddharaju, K.D. Teo, S.H.G. Shen, C. Jiang, Y. Zhu, C.X. Yu, M.B. Lo, G.Q. Balasubramanian, N. Kwong, D.L. Gnani, E. Baccarani, G. Si-nanowire based gate-all-around nonvolatile SONOS memory cell
description	10.1109/LED.2008.920267
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Fu, J. Singh, N. Buddharaju, K.D. Teo, S.H.G. Shen, C. Jiang, Y. Zhu, C.X. Yu, M.B. Lo, G.Q. Balasubramanian, N. Kwong, D.L. Gnani, E. Baccarani, G.
format	Article
author	Fu, J. Singh, N. Buddharaju, K.D. Teo, S.H.G. Shen, C. Jiang, Y. Zhu, C.X. Yu, M.B. Lo, G.Q. Balasubramanian, N. Kwong, D.L. Gnani, E. Baccarani, G.
author_sort	Fu, J.
title	Si-nanowire based gate-all-around nonvolatile SONOS memory cell
title_short	Si-nanowire based gate-all-around nonvolatile SONOS memory cell
title_full	Si-nanowire based gate-all-around nonvolatile SONOS memory cell
title_fullStr	Si-nanowire based gate-all-around nonvolatile SONOS memory cell
title_full_unstemmed	Si-nanowire based gate-all-around nonvolatile SONOS memory cell
title_sort	si-nanowire based gate-all-around nonvolatile sonos memory cell
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83028
_version_	1781784278905913344

Si-nanowire based gate-all-around nonvolatile SONOS memory cell

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